最新論文

Influence of growth rate on homoepitaxial growth of AlN at 1450 °C by hydride vapor phase epitaxy

Kumagai, Y., Goto, K., Nagashima, T., Yamamoto, R., Boćkowski, M., Kotani, J., Influence of growth rate on homoepitaxial growth of AlN at 1450 °C by hydride vapor phase epitaxy. Applied Physics Express (Appl. Phys. Express) 15: 115501 1-4, 2022