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Yamamoto, R., Takekawa, N., Goto, K., Nagashima, T., Dalmau, R., Schlesser, R., Murakami, H., Collazo, R., Monemar, B., Zlatko Sitar, Kumagai, Y. Hydride vapor phase epitaxy of Si-doped AlN layers using SiCl4 as a doping gas. Journal of Crystal Growth (J. Cryst. Growth)., 545: 125730 1-6, 2020
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