最新論文

Halide vapor phase epitaxy of Si doped beta-Ga2O3 and its electrical properties

Goto, K., Konishi, K., Murakami, H., Kumagai, Y., Monemar, B., Higashiwaki, M., Kuramata, A., Yamakoshi, S. Halide vapor phase epitaxy of Si doped beta-Ga2O3 and its electrical properties. Thin Solid Films (Thin Solid Films) 666: 182-184, 2018.