最新論文

Comparison of O-2 and H2O as oxygen source for homoepitaxial growth of beta-Ga2O3 layers by halide vapor phase epitaxy

Konishi, K., Goto, K., Togashi, R., Murakami, H., Higashiwaki, M., Kuramata, A., Yamakoshi, S., Monemar, B., Kumagai, Y. Comparison of O-2 and H2O as oxygen source for homoepitaxial growth of beta-Ga2O3 layers by halide vapor phase epitaxy. Journal of Crystal Growth (J. Cryst. Growth). 492: 39-44, 2018